Welcome to the Clausthal Centre for Material Technology > SEAL > Analytics > Electron Backscattered Diffraction (EBSD)

Electron Backscattered Diffraction (EBSD)

(Kopie 2)

Schematic representation of EBSD.
Particle size distribution in multi-crystalline silicon.

Electron Backscattered Diffraction (EBSD) is used to determine information regarding the crystalline structure of solid samples in a scanning electron microscope (SEM). With this method, the sample to be studied is tilted at an angle of 70° to the incoming electron beam, so that the electrons scatter inelastically on the sample's atoms. If the Bragg condition is fulfilled for incoming electrons on lattice levels, this can result in constructive interference. Across all lattice layers in the crystal this results in a reinforcement, as such that diffraction image contains information regarding the crystal symmetry. In the same way, using predefined crystal structures, phases or crystal orientations in the sample can be determined. Further evaluation of the data enables the examination of the particle distribution or the determination of pole figures.

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